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| D G S TO-247 ARF464A ARF464B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. * Specified 65 Volt, 81.36 MHz Characteristics: * Output Power = 100 Watts. * Gain = 13dB (Class AB) * Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage * Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness. Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. P E R 1 IM L A IN All Ratings: TC = 25C unless otherwise specified. ARF464A/B UNIT Volts Y R 200 200 15 30 180 0.70 -55 to 150 300 Amps Volts Watts C/W C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage (I D(ON) = 7.5A, VGS = 10V) MIN TYP MAX UNIT Volts 200 3.0 25 A Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 100 2 3 3.5 5 5 nA mhos 050-5999 Rev - 7-2001 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6W MIN TYP ARF464A/B MAX UNIT 775 340 150 6 9 13 3.4 1000 480 230 12 18 20 10 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS h y Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 81.36 MHz VGS = 0V VDD = 65V MIN TYP MAX UNIT dB % 13 70 15 75 Pout = 100W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 15 Class C VDD = 150V CAPACITANCE (pf) 10 5 0 30 P 45 NOT UPDATED E R Pout = 150W IM L A IN 3000 1000 500 100 50 Y R Ciss Coss Crss 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 8 ID, DRAIN CURRENT (AMPERES) TJ = -55C ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 OPERATION HERE LIMITED BY RDS (ON) 6 1mS 10 5 4 050-5999 Rev - 7-2001 10mS 2 TJ = +125C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics TJ = -55C TC =+25C TJ =+150C SINGLE PULSE 1 1 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 100mS DC ARF464A/B 1.2 1.1 1.0 0.9 0.8 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 25 20 VGS=10 & 15V 8V 7.5V 15 10 7V 6.5V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 160 Class C VDD = 150V 5 6V 5.5V 0 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics f = 81.36 MHz 120 GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 14 POUT, POWER OUT (WATTS) 12 Class C VDD = 150V 80 10 40 0 0 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 2 0.8 D=0.5 , THERMAL IMPEDANCE (C/W) 0.1 0.05 PDM P 0.1 0.05 0.02 0.01 0.2 E R SINGLE PULSE 10-4 IM L 40 80 120 160 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out A IN 8 6 0 Note: Y R f = 81.36 MHz 0.01 0.005 t1 t2 Duty Factor D = t1/t2 qJC Peak TJ = PDM x ZJC + TC Z 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 80 100 Zin () 24 - j 5 7.5 - j 11 2.0 - j 6.2 0.7 - j 3.1 0.31 + j 0.52 0.47 + j 2.1 0.9 + j 3.8 ZOL () 15.3 - j 0.6 14.2 - j 3.4 11.6 - j 5.3 8.9 - j 5.6 5.3 - j 4.0 4.0 - j 2.7 2.8 - j 0.9 Zin - Gate shunted with 25 IDQ = 50mA ZOL - Conjugate of optimum load for 100 Watts output at Vdd = 65V 050-5999 Rev - 7-2001 ARF464A/B L4 C7 Bias 0 - 12V C8 R1 RF Input L2 C2 L1 DUT C3 R2 C1 L3 + 65V C6 RF Output C5 C4 C1 -- 560pF NPO 50V chip mounted at gate lead C2-C3 -- Arco 424 Mica trimmer C4-C5 -- Arco 463 Mica trimmer C5-C8 -- 10nF 500V COG chip L1 -- 3t #18 .25" ID .3"L ~48nH L2 -- 3t #16 AWG .25" ID .35"L ~68nH L3 -- 10t #18 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R2 -- 50 Ohm 1/2W Carbon DUT = ARF464A/B 81.36 MHz Test Circuit 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) P E R 6.15 (.242) BSC 4.50 (.177) Max. 1.01 (.040) 1.40 (.055) IM L Top View 15.49 (.610) 16.26 (.640) A IN Y R TO-247 Package Outline 5.38 (.212) 6.20 (.244) Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 050-5999 Rev - 7-2001 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 |
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